Abstract
Using metal plasma immersion ion implantation and deposition (MePIIID) it is possible to obtain highly textured rutile layers within a wide range of stoichiometry, depending on the oxygen gas flow to titanium arc current ratio, on silicon. Even for a composition of TiO1.8, only rutile reflections were found with X-ray diffraction. Reflectometry spectra show an internal structure of two layers with a similar density. At the same time, the layer thickness obtained from spectroscopic ellipsometry is considerable less than that from Rutherford backscattering spectroscopy (RBS), indicating that a rather abrupt transition from metallic to semiconducting is observed within the films, depending on the process conditions.
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