Abstract
Phosphorus doped hydrogenated amorphous silicon (a-Si:H) films were prepared by decomposition of silane using RF plasma glow discharge. Both DC dark conductivity measurements, and spectrophotometric optical measurements through the range 200–3000nm were recorded for the prepared films. The DC conductivity activation energy Ea decreased from 0.8eV for the undoped sample to 0.34eV for the highest used doping value. The optical energy gap Eg decreased ranging from 1.66eV to 1.60eV. The refractive index n, the density of charge carriers N/m* and the plasma frequency ωp showed an opposite behavior, i.e. an increase in value with doping. Fitting the dispersion values to Sellmeier equation led to the determination of the material natural frequency of oscillating particles. A correlation between the changes in these parameters with the doping has been attempted.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Optik - International Journal for Light and Electron Optics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
