Abstract
A novel AlGaN/AlGaN multiple-quantum-wells light-emitting diode (LED) structure with linearly graded Al-content in the quantum well (QW) is thoroughly investigated in order to observe the effect on the electrical and optical performances of the devices. The results confirm that the polarization-shape across the active region highly depends on the concentration profile of aluminium, which eventually plays a critical role in determining the overall radiative recombination by promoting hole injection, as well as, improving the electron hole wave-function overlap. In order to correlate, two modified structures with variation in the compositional grading in the quantum well both along and opposite to the growth direction have been studied, and compared to a conventional structure. The outcomes reveal that the structure with Al composition grading in the QW which varies from 72 % to 76 % in the growth direction enhances the device performance.
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