Correlation between optical properties and chemical composition of sputter-deposited germanium oxide (GeOx) films

Abstract

Germanium oxide (GeOx) films were grown on (100) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, Г=O2/(Ar+O2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge+GeO+GeO2 and then finally to GeO2 upon increasing Г from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeOx films grown were amorphous. The optical properties probed by spectroscopic ellipsometry indicate that the effect of Г is significant on the optical constants of the GeOx films. The measured index of refraction (n) at a wavelength (λ) of 550nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge+GeO+GeO2 composition is associated with a characteristic decrease in n (λ=550nm) to 2.62 and occurs at Г=0.25. Finally n drops to 1.60 for Г=0.50–1.00, where the films become GeO2. A detailed correlation between Г, n, k and stoichiometry in DC sputtered GeOx films is presented and discussed.