Abstract
One of the most useful applications of MOSFET semiconductor components has been introduced to improve the gamma or electron radiation detection system. In many practical cases it is not easy to carry out experimental tests of semiconductor devices in radiation environment, so it is more convenient to perform the assessment of ionizing radiation interaction with semiconductor devices by using numerical methods based on Monte Carlo simulation techniques. A large number of previous studies have mainly focused on the study of MOSFET dosimeter response to gamma and X radiation fields. Therefore, this work will be focused on a new approach to the study radiation characteristics of the MOSFET dosimeter in fields of other types, such as field of high-energy electrons (4 MeV to 20 MeV). From the engineering point of view, it is important to consider the material that is used as a physical protection of the MOSFET dosimeter. So, it is important to investigate the energy dependence of MOSFET dosimeter to different shielding materials. For this purpose, special numerical experiments of electron transport within all layers of the elementary MOSFET structure will be performed. Shielding materials such as Kovar, Titanium Alloy with Aluminum and Niobium, Titanium Alloy with Zirconium and Niobium will be considered. The electron transport will be simulated with Monte Carlo method using the software package FOTELP-2K12. The distribution of deposited energy in all material zones of interest, as well as the absorbed dose in dosimeter sensitive zone of MOSFET structure will be determined by results obtained with numerical calculations. The physical shielding factor (PSF) for the MOSFET dosimeter, which can show the correlation between dosimeter energy dependence and shielding material in the field of electron beam radiation, will be determined within the paper. After comparing values of PSF for considered materials the recommendation for a lid material that serves as shielding for MOSFET dosimeter will be given.
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