Abstract
In recent years, the non-volatile resistive random-access memory (ReRAM) has been investigated for next-generation memory devices to fulfill the limitations of commercial transistor-based memory devices. Every now and then, peculiar nanostructures with unique characteristics are reported. However, the influence of distinct nanostructures of a same metal oxide material on the resistive switching performance are not yet surveyed in detail. In this work, two structurally distinct WO3 nanostructures, namely nanoplates and nanocubes, were synthesized through hydrothermal method. The crystalline nature, morphology, atomic composition, and chemical states of WO3 nanostructures were characterized effectively. The fabricated WO3 ReRAM devices were exhibited bipolar resistive switching and the performance of nanoplate and nanocube devices are distinguished in detail.
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