Abstract

Properties of van der Waals (vdW) heterostructures strongly depend on the quality of the interface between two dimensional (2D) layers. Instead of having atomically flat, clean, and chemically inert interfaces without dangling bonds, top-down vdW heterostructures are associated with bubbles and intercalated layers (ILs) which trap contaminations appeared during fabrication process. We investigate their influence on local electrical and mechanical properties of MoS2/WS2 heterostructures using atomic force microscopy (AFM) based methods. It is demonstrated that domains containing bubbles and ILs are locally softer, with increased friction and energy dissipation. Since they prevent sharp interfaces and efficient charge transfer between 2D layers, electrical current and contact potential difference are strongly decreased. In order to reestablish a close contact between MoS2 and WS2 layers, vdW heterostructures were locally flattened by scanning with AFM tip in contact mode or just locally pressed with an increased normal load. Subsequent electrical measurements reveal that the contact potential difference between two layers strongly increases due to enabled charge transfer, while local I/V curves exhibit increased conductivity without undesired potential barriers.

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