Abstract
AbstractThe nanocrystalline silicon films have been prepared using very high frequency PECVD technique. The deposition power density and hydrogen dilution of Silane were varied. The sizes of the grains varies from 6 nm to 32 nm for films deposited under different conditions. The stress of the nanocrystalline films have been estimated from (220) line. It is observed that compressive stress decreases and become tensile stress as Xc of the films increases with increase in power density. Whereas compressive stress increases as crystalline volume fraction increases with increase in hydrogen dilution. Maximum tensile stress and compressive stress obtained are 0.23 GPa and 5.1 GPa respectively. It is also observed that compressive stress in the film increases as grain size increases. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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