Abstract
SiOC films prepared by the chemical vapor deposition were analyzed by photo luminance spectra and atomic force microscopy to define the correlation between the chemical shift by PL spectra and roughness of SiOC films as low dieclectric constant materials with amorphous structures. The amorphous structure was owing to decrease the polarity in SiOC film. The effect of weak boundary conditions due to the low polarization induced the chemical shift in PL spectra, and the shifting to high wavelength produced to decrease the roughness. These effects such as the red shift, lowering of roughness and polarity were required for an amorphous structure. The lowest dielectric constant could be obtained at SiOC film with the lowest polarity as ideal amorphous structure.
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