Abstract
The blocking temperature distribution Tb(T) and the failure activation energy (as defined by a 10% drop in the magnetoresistance amplitude in a reverse field equivalent to the self-demagnetizing field of a micron size stripe height device) have been determined in spin-valve sheet films with FeMn, IrMn, PtMn, NiMn, and CrPdMn antiferromagnetic exchange biasing layers. We find a clear correlation between the expected lifetime and the fraction of loose (e.g., unblocked) antiferromagnetic grains, which we believe is due to pinned layer rotation being the main failure mechanism in these systems. For CrPdMn structures, a good agreement is found between the stability of sheet films and of finished sliders. From these data, only NiMn and PtMn appear to be suitable for disk-drive applications.
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