Abstract

The effect of interlayer exchange coupling (IEC) in {Tb/Co}4/Rh/{Co/Tb}4/Pt multilayered wires on the domain wall (DW) structure and DW velocity was investigated. It was found that the stability of the Néel-type DWs was enhanced and the velocity of the current-induced DW movement increased with an increase in the antiferromagnetic IEC strength. The micromagnetic simulation based on the Landau–Lifshitz equation clarifies that the direction of the magnetic moment in the DWs depends on the antiferromagnetic IEC strength, and the stability of the Néel-type DW increases with an increase in the antiferromagnetic IEC strength. As a consequence of this stability, the spin-orbital torque affects effectively on the magnetic moment of the DWs and the DW velocity increases. These results imply that the DW velocity in magnetic domain-based memories can be controlled by the antiferromagnetic IEC strength.

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