Abstract
Epilayer tilting in GaAs epilayers grown by molecular beam epitaxy (MBE) on vicinal Si substrates was studied by X-ray diffraction and was related to the initial growth planarity. MBE GaAs, MEE (migration-enhanced epitaxy) GaAs and MEE AlAs buffers resulted in increasing planarity in this order, as revealed by reflection high-energy electron diffraction. The measured tilt is decomposed to coherent and misfit-dislocation (MD) parts. Increasing planarity resulted in decreased MD tilts. The results are explained with the generation of 60° MDs upon island coalescence and asymmetric stress release at substrate surface steps.
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