Abstract
The compound semiconductor CdZnTe:In is the most promising material for room temperature nuclear radiation detectors. Enlarging the diameter of CdZnTe:In ingot can improve the yield and reduce the production cost, which, however, affects the properties of CdZnTe:In to some extent. Recently, CdZnTe:In ingots of 30 mm and 60 mm diameter were grown by the modified vertical Bridgman method in our laboratory. The crystal properties of both ingots were compared according to etch pit density (EPD) of dislocation, X-ray rocking curve, IR transmission spectra, and photoluminescence (PL) spectra. For the CdZnTe:In ingot of 30 mm diameter, the EPD of dislocation was 2.1 × 104 cm-2, and was up to 1.9 × 105 cm-2 when the CdZnTe:In ingot diameter was enlarged to 60 mm. The full width at half-maximum (FWHM) of X-ray rocking also increased from 0.02014° to 0.02864° at the same time. The two phenomena imply that the crystalline quality of CdZnTe:In deteriorated with the enlarging of the ingot diameter. In addition, when t...
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
