Abstract
In this work we report on the characteristics of (Ni/Au)/AlGaN/GaN/SiC Schottky barrier diode (SBD). A variety of electrical techniques such as capacitance-voltage ( C - V ) and deep-level transient spectroscopy (DLTS) measurements were used to characterize the diodes. We observed an hysteresis phenomenon on the C - V characteristics in the Schottky diode. The parasitic effect can be attributed to the presence of traps in the heterostructure. Deep defects analysis was performed by deep-level transient spectroscopy (DLTS). One hole trap have been detected with an activation energy and a capture cross-section of 0.75 eV and 1.093 × 10 −11 cm 2 . The localization and the identification of this trap have occurred and a correlation between the defect and the hysteresis phenomenon has been discussed. At high temperatures, the DLTS signal sometimes becomes negative, likely due to an artificial surface-state effect.
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