Abstract
The empirical pseudopotential method coupled with the virtual crystal approximation has been used to compute the electronic band gaps and pseudocharge densities for the compound semiconductor GaAs and the alloy Ga 1− x Al x As. The variation of the compositional fraction of AlAs in GaAs has been correlated to the high pressure effect on GaAs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
