Abstract
The changes in the electrical and chemical properties of HfO2 films grown by atomic layer deposition on Si, Si0.8Ge0.2 and Ge substrates during the post-deposition annealing (PDA) were studied. The migration of Ge plays a key role in reducing the capacitance equivalent thickness (CET) after PDA. A high resolution x-ray photoelectron spectroscopy and extended x-ray absorption fine structure analyses confirmed that the Ge atoms which have already diffused into the HfO2 upper layer during deposition are drawn back to film/substrate interfacial layer during the PDA.
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