Abstract
Correlation between fabrication process and thermal distribution was evaluated by means of high resolution IR thermography in two 0.5 W MESFET structures, having the same layout but differing in the presence of via hole connections. The via hole structure allows a great improvement in device thermal behaviour, with decrease in R tk and more uniform thermal distribution. The effect of process variations, such as gate misalignments, on temperature distribution within the device active area was also evaluated.
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