Correlation between energy positions of deep intrinsic point-defect levels and a limiting fermi level in irradiated III–V semiconductors

Abstract

The energy levels of neutral anion (VA) and cation (VC) vacancies and antisite defects are calculated for the anion CA and cation AC sublattices of III–V semiconductors. An averaged energy level position for these defects is estimated to be Eav abs = 4.9 eV. The position coincides with the local charge electroneutrality level. It is shown that the case, where the total energies of formation of VA, VC and antisite CA, AC defects in the sublattices of binary semiconductors are similar, corresponds to the point-defect equilibrium condition and stabilization of the Fermi level in the proximity of the local charge electroneutrality level.