Abstract
The process-induced domain evolution and asymmetric switching in epitaxial Pb(Zr0.52Ti0.48)O3 (PZT) thin films have been studied by reciprocal space mapping, transmission electron microscopy, high-temperature x-ray diffraction, and the polarization-electric field hysteresis loop measurements. After annealing at reduced oxygen pressures, it was evidenced that an oxygen loss at the PZT bottom interface can occur at temperatures well below the Curie temperature TC, and more importantly, the oxygen loss can induce a large positive voltage offset and drive simultaneously the polydomain formation in the PZT films. Our results indicate that the structure evolution is correlated with the coercive voltage shift, and an oxygen-loss-related internal stress at the interface would be responsible for the large internal electric field in epitaxial PZT films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
