Abstract
A correlation between the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics of Schottky barrier diodes (SBDs) is revealed and claimed to be a general property of SBDs for the first time. Analytical expressions explaining the correlation based on the electric field dependence of the Schottky barrier height are derived, yielding novel approaches to evaluate Schottky barrier height lowering and to model the device behaviors.
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