Abstract
The charge carrier diffusion length and dielectric relaxations are important parameters which decide the performance of various optoelectronic devices, in particular for photovoltaic devices. A comparative study is carried out on the charge transport length scale (L) for passivated and pristine CH3NH3PbI3 (MAPI) thin-film-based perovskite solar cells (PSCs) through scanning photocurrent microscopy (SPM). The SPM study suggested an improved L and degree of ambipolarity of photogenerated charge carriers (electron and hole) in passivated as compared to pristine MAPI-based PSCs. These results were found to be correlated with frequency-dependent photocurrent measurement, which shows that the relaxation time of the charge carrier is relatively lower in passivated MAPI-based PSCs. This mechanism could be explained by trap-assisted recombination, where trap states are induced by ion migration in halide perovskite films. Furthermore, passivation of traps showed an increased degree of ambipolarity in the perovskite semiconductor thin film.
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