Correlation Between Bands Structure and Quantum Magneto Transport Properties in InAs/GaxIn1−xSb Type II Superlattice for Infrared Detection

Nassima Benchtaber,Merieme Benaadad,Samir Melkoud,Driss Barkissy,Abdelhakim Nafidi,Abderrezak Boutramine,Es-Said Es-Salhi,Fatiha Chibane

doi:10.3389/fphy.2020.00052

Nassima Benchtaber, Merieme Benaadad + Show 6 more

Open Access

https://doi.org/10.3389/fphy.2020.00052

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Journal: Frontiers in physics	Publication Date: Mar 18, 2020
Citations: 1	License type: CC BY 4.0

Affiliation: Université Ibn Zohr

Abstract

We have used the envelope function formalism to investigate the bands structure of LWIR type II SL InAs(d1=2.18d2)/In0.25Ga0.75Sb(d2=21.5A). Thus, we extracted optical and transport parameters as the band gap, cut off wavelength, carriers effective mass, Fermi level and the density of state. Our results show that the higher optical cut-off wavelength can be achieved with smaller layer thicknesses. The semiconductor-semi metal transition was studied as a function of temperature. Our results permit us the interpretations of Hall and Shubnikov-de Haas effects. These results are in agreement with experimental results in literature and a guide for engineering infrared detectors.

Highlights

There are a several efforts in developing infrared materials for Very Long Wavelength Infrared (VLWIR) photodetection with the optical cut-off wavelengths λc ≥ 7.5 μm in the atmospheric window
The key lies in the fact that by increasing indium composition in In1−xGaxSb layer, the corresponding lattice constant increases
We note that in the previous years, a very few works were reported to verify the theoretical performance of InAs/InGaSb SLs for LWIR and VLWIR photodetection

Summary

INTRODUCTION

There are a several efforts in developing infrared materials for Very Long Wavelength Infrared (VLWIR) photodetection with the optical cut-off wavelengths λc ≥ 7.5 μm in the atmospheric window. InAs/In1−xGaxSb type-II superlattices (SLs) are still the most promising candidate In this area, Smith and Mailhiot [1] have shown that this material system provides distinctive advantages suitable for VLWIR photodetection. The theory of band structure is necessary for describing the effects of external excitations on transport parameters and properties of optoelectronics devices [5] Owing to this lack of studies, we have investigated the bands structure of presented LWIR type II SL InAs (d1 = 47 Å)/Ga0.75In0.25Sb(d2 = 21.5 Å) with d1/d2 = 2.186 along the wave vector kz in the growth. In each host material and for a given energy, the two–band Kane model [10] gives the wave vector (k2i + k2p).

RESULTS AND DISCUSSIONS

CONCLUSION

DATA AVAILABILITY STATEMENT