Abstract
We have achieved over 1000% colossal magnetoresistance (CMR) at room temperature by introducing well-controlled disorder to the A-site ordered manganites, Sm 1 - x La x + y Ba 1 - y Mn 2 O 6 . The La-doping to the A-sites (Sm and Ba) of mother compound, SmBaMn 2 O 6 , has mainly three different effects: (1) ionic-size randomness (IR) by Sm(La), (2) charge randomness (CR) by Ba(La) and (3) carrier doping by La/Ba. Any CMR associated with the melting of charge/orbital order (CO) phase by magnetic field is not caused by only IR, because the CO state is very stable in the homogeneous electrostatic potential at the A-site. However, a slight CR destabilizes the CO state and realizes phase separation state between CO and ferromagnetic domains, resulting in an insulator–metal transition under magnetic field, CMR effect. Therefore, the electrostatic potential disorder (CR) at the A-site is an essential role for CMR effect.
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