Abstract
A dielectric barrier discharge (DBD) in Ar/CH 4 gas mixtures used for amorphous hydrogenated carbon (a-C:H) film deposition was investigated. It was found that the a-C:H film properties (the ratios of sp 3 / sp 2 and CH 3/CH 2, the number density of hydrogen atoms in the film and the energy band gap) correlate with the number densities of Ar( 1s 5 ) atom and CH( X 2 Π) radical. A high value of the energy band gap, which corresponds to a high content of sp 3 fraction in the film was obtained, when the CH radical number density in the plasma was relatively small (∼ 10 8 cm − 3 ). The DBD breakdown voltage decreased when the a-C:H film was deposited on the dielectric surface of the electrode.
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