Correlation among secondary ion mass spectrometry, cross-section transmission electron microscopy, and Rutherford backscattering analyses for defect density and depth distribution determination

Abstract

Correlation is found between the relative densities and depth distributions of defect clusters/disorder/damage measured by cross-section transmission electron microscopy and Rutherford backscattering and silver atom depth distributions measured by secondary ion mass spectrometry for (100) and (111) silicon implanted with silver ions and annealed at 550 °C.