Abstract
Two SrVO3 (SVO)-based all-solid-state redox transistors were fabricated; one with a Li4SiO4 (LSO) Li+ ion conductor and one with Y-stabilized-ZrO2 (YSZ) H+ ion conductor. The two devices showed different electronic conduction characteristic that were in contrast to that expected with similar electronic carrier doping behavior due to monovalent cation insertion. While the YSZ device showed a relatively large drain current enhancement (9%), that shown by the LSO device was very small (0.2%). In both devices, the electrical conduction characteristic was accompanied by considerable hysteresis due to non-steady state ionic diffusion in the SVO thin film. Furthermore, the gate current value was much larger than present in electric-double-layer-transistors (EDLT), indicating that these are redox transistors rather than EDLT.
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