Abstract
We present a study of the growth kinetics of pentacene monolayer islands on SiO 2 in the submonolayer regime by using Atomic Force Microscopy (AFM). Two distinct growth modes, namely correlated growth (CG) and non-correlated growth (NCG), have been identified by Voronoi tesselation. These two modes are characterized by different island growth kinetics. In the case of correlated growth, the average island size 〈 A〉 scales with deposition time t i.e. 〈 A〉 ∝ t whereas for non-correlated growth, 〈 A〉 ∝ t 2. The CG and NCG regimes are defined by the level of re-evaporation which determines the capture zones around the islands: Wigner–Seitz cells for CG and coronas of width λ D ( λ D is the mean diffusion distance on SiO 2 before re-evaporation) for NCG. A simple model is proposed to reproduce the experimental growth kinetics in both modes.
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