Corrections to "High-field electron velocity in silicon surface-accumulation layer"

Abstract

In the above-named work, there were two editorial errors. On p. 491, left column, the first full sentence should read "An application of a substrate bias voltage Vsub provides a desired degree of band bending at the back Si-SiO2 interface." On p. 491, the first sentence in the right column should read "For the large-parallel-field case [Fig. 2(b)], the drain voltage was provided by voltage pulses of 1 μs duration and 0.1% duty cycle to minimize the effect of self-heating."