Abstract
The authors regret two mistakes in Figure 1 and the Experimental Section of the above article published on the Early View platform of Advanced Materials. The correct Figure 1 is: (a) Schematic band structure of transition-metal doped oxide semiconductors with impurity bands induced by structural defects. (b) Partial DOS for NiO: (top panel) with a Ni vacancy, (middle panel) with doped Mn2+, and (bottom panel) with doped Mn3+. Further, the last section of the Experimental Section was missing the institutions at which the experiments were carried out and should read: […] The Mn K-edge X-ray absorption fine structure (XAFS) spectra were collected in fluorescence mode at room temperature at the U7C beamline of National Synchrotron Radiation Laboratory (NSRL), China. The Mn L3-edge and O K-edge X-ray absorption near-edge structure (XANES) spectra were collected in a mode of sample drain current under a vacuum better than 5 × 10−5 Pa at the U19 beamline of NSRL.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
