Correction to High-Performance Field Effect Transistors from Solution Processed Carbon Nanotubes

Abstract

ADVERTISEMENT RETURN TO ISSUEPREVAddition/CorrectionORIGINAL ARTICLEThis notice is a correctionCorrection to High-Performance Field Effect Transistors from Solution Processed Carbon NanotubesHuiliang Wang, Jun Luo, Alex Robertson, Yasuhiro Ito, Wenjing Yan, Volker Lang, Mujtaba Zaka, Franziska Schaeffel, Mark H. Rümmeli, G. Andrew D. Briggs, and Jamie H. Warner*Cite this: ACS Nano 2011, 5, 4, 3400Publication Date (Web):March 11, 2011Publication History Received25 February 2011Published online11 March 2011Published inissue 26 April 2011https://doi.org/10.1021/nn200779gCopyright © 2011 American Chemical SocietyRIGHTS & PERMISSIONSArticle Views529Altmetric-Citations-LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InReddit PDF (521 KB) Get e-AlertsSUBJECTS:Carbon nanotubes,Transistors Get e-Alerts