Correction to Breakdown of High-Performance Monolayer MoS2 Transistors

Abstract

ADVERTISEMENT RETURN TO ISSUEPREVAddition/CorrectionNEXTORIGINAL ARTICLEThis notice is a correctionCorrection to Breakdown of High-Performance Monolayer MoS2 TransistorsDominik Lembke and Andras Kis*Cite this: ACS Nano 2013, 7, 4, 3730Publication Date (Web):March 6, 2013Publication History Published online6 March 2013Published inissue 23 April 2013https://doi.org/10.1021/nn400554kCopyright © 2013 American Chemical SocietyRIGHTS & PERMISSIONSACS AuthorChoiceArticle Views1866Altmetric-Citations8LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InReddit PDF (110 KB) Get e-AlertsSUBJECTS:Contact resistance,Electrical properties,Insulators,Monolayers,Transistors Get e-Alerts