Correction of dopant concentration fluctuation effects in silicon drift detectors

D Nouais,M Bondila,V Bonvicini,P Cerello,E Crescio,P Giubellino,R Hernández-Montoya,A Kolojvari,L.M Montaño,B.S Nilsen,C Piemonte,A Rashevsky,F Tosello,A Vacchi,R Wheadon

doi:10.1016/s0168-9002(00)01214-6

Abstract

Dopant fluctuations in silicon wafers are responsible for systematic errors in the determination of the particle crossing point in silicon drift detectors. In this paper, we report on the first large-scale measurement of this effect by means of a particle beam. A significant improvement of the anodic resolution has been obtained by correcting for these systematic deviations.

Highlights

Dopant fluctuations in silicon wafers are responsible for systematic errors in the determination of the particle crossing point in silicon drift detectors
We present the first large scale study of these deviations, which we performed on an ALICE-D1 SDD prototype, produced on a 3 kΩ cm 5”
We built the residual distributions between the anodic coordinate measured by the SDD and the reference anode axis coordinate measured by the telescopes

Summary

Introduction

Dopant fluctuations in silicon wafers are responsible for systematic errors in the determination of the particle crossing point in silicon drift detectors. 1. These deviations are responsible for systematic errors on the anodic coordinate. E(x,y) small area of a SDD, constructed on a floating zone wafer by using an infrared laser [3,4]. We present the first large scale study of these deviations, which we performed on an ALICE-D1 SDD prototype, produced on a 3 kΩ cm 5”

Results

Conclusion