Abstract
Correction for ‘Electronic and transport properties of Li-doped NiO epitaxial thin films’ by J. Y. Zhang et al., J. Mater. Chem. C, 2018, 6, 2275–2282.
Highlights
The authors regret the omission of an acknowledgement of funder support, and would like to add the following sentence to the acknowledgements section
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers
E-mail: kelvinzhang@xmu.edu.cn b Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK c Paul-Drude-Institut fur Festkorperelektronik, Hausvogteiplatz 5-7, DE-10117 Berlin, Germany d Physical Sciences Division, Physical & Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, USA e Materials Science & Engineering, Binghamton University, Binghamton, New York 13902, USA f Diamond Light Source Ltd., Harwell Science and Innovation Campus, Didcot, OX11 0DE, UK g Department of Physics, University of Liverpool, Liverpool L69 3BX, UK
Summary
The authors regret the omission of an acknowledgement of funder support, and would like to add the following sentence to the acknowledgements section.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
