Abstract
Only a single linearly dispersing π-band cone, characteristic of monolayer graphene, has so far been observed in Angle Resolved Photoemission (ARPES) experiments on multilayer graphene grown on C-face SiC. A rotational disorder that effectively decouples adjacent layers has been suggested to explain this. However, the coexistence of μm-sized grains of single and multilayer graphene with different azimuthal orientations and no rotational disorder within the grains was recently revealed for C-face graphene, but conventional ARPES still resolved only a single π-band. Here we report detailed nano-ARPES band mappings of individual graphene grains that unambiguously show that multilayer C-face graphene exhibits multiple π-bands.
Highlights
CORRIGENDUM: Multiple p-bands and Bernal stacking of multilayer graphene on C-face SiC, revealed by nano-Angle Resolved Photoemission
The authors neglected to cite a related study that reports an ARPES experiment indicating the presence of multiple p bands in multilayer graphene on C-face SiC.1
In the present Article, nano-ARPES band mappings of individual graphene grains unambiguously show that multilayer C-face graphene exhibits multiple p-bands
Summary
CORRIGENDUM: Multiple p-bands and Bernal stacking of multilayer graphene on C-face SiC, revealed by nano-Angle Resolved Photoemission.
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