Abstract
A two-layer transmission line model has been proposed to model the sheet resistance of a semiconductor layer of finite thickness outside the ohmic contact region of a transmission line model test pattern. It is shown that the effective sheet resistance is a function of the separation between the contacts and that there is a pivot point in the curve of the total resistance between the contacts versus their separation. The work reveals an error in the measurement of R c using the standard tlm for small contact spacing. The results are in agreement with simulation results obtained from the boundary element method.
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