Correct extraction of frequency dispersion in accumulation capacitance in InGaAs metal-insulator-semiconductor devices

Abstract

The anomalous frequency dispersion of the accumulation capacitance, i.e. an increase in the accumulation capacitance at high frequencies, of Pt/Al2O3/InGaAs metal-oxide-semiconductor (MOS) capacitors was investigated in this study. The anomalous frequency dispersion can be attributed to the considerable effects of parasitic inductance at high frequencies. The effects of parasitic inductance were effectively suppressed by decreasing the capacitor area without changing the MOS structure. This suggests that a smaller capacitor area should be used to precisely characterize the capacitance-voltage behavior of InGaAs-based MOS devices.