Core-Level Photoelectron Spectroscopy of Rare-Gas Atoms(Ne,Ar,Kr,Xe) Implanted in 3d Transition Metals.

Abstract

Core-level electronic structures have been investigated for rare-gas atoms (Ne, Ar, Kr, Xe) implanted in 3 d transition metals. The extra-atomic relaxation energies in the core-ionization process of the rare gas atoms were estimated by means of the Auger parameters . It was found that the extra-atomic relaxation energies of the implanted xenon and neon increase with the number of d electrons of the host metal. The magnitudes of the relaxation energies of xenon are close to those of the host metals themselves rather than those of the xenon adsorbed on metal surfaces. These facts suggest that the core holes in rare-gas atoms are screened by the d electrons in the host metals. It was also elucidated that the extra-atomic relaxation energies of rare-gas atoms in the same hostmetal (Ti) increase with the atomic mass of the rare gases. This finding is interpreted by the consideration that the screening effect by the d electron grows with the atomic radius of the implanted rare gases.