Abstract
Core-level photoemission spectra of the As 3d, Ga 3d and Bi 5d core levels were recorded for the BiGaAs (111)A-(2×2) surface. From the early stages of Bi growth, there are two distinct chemical environments for Bi. Surface Bi is bonded to both As and Ga atoms. The deposition of approximately 1 ML of Bi removes the dangling bonds from the surface As and Ga atoms, which are associated with the (2×2) vacancy-buckling structure. Annealing to 350°C reverses this process and surface dangling bonds for Ga reappear. When the Bi had fully desorbed at 425°C, photoemission and LEED results showed that the surface recovers the (2×2) vacancy structure but with a larger degree of surface disorder than that found before the deposition of Bi.
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