Abstract
The valence and core electronic surface states on the (111)2\ifmmode\times\else\texttimes\fi{}2 surfaces of InSb and InAs have been studied by angle-resolved photoelectron spectroscopy. Similarities in data show that the vacancy-buckling model, which is known to describe the InSb(111)2\ifmmode\times\else\texttimes\fi{}2 surface, also applies to InAs(111)2\ifmmode\times\else\texttimes\fi{}2. Three surface valence bands are identified and their dispersions are mapped along symmetry directions in the surface Brillouin zone. The In 4d core levels show one surface shifted component while no surface shifted components of the Sb 4d or As 3d core levels could be resolved. \textcopyright{} 1996 The American Physical Society.
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