Core hole electron screening in InSb

Abstract

The application of a potential model to the analysis of differences between the Auger parameters of InSb and the elemental materials yields a value 1.82±0.07Å for the core hole screening distance in InSb. It also yields a value of 0.22 ± 0.49 e for the charge transfer in InSb. Shifts in the Auger parameters of elements between their metallic states and in a compound semiconductor are interpreted using a novel method based on quantifying atomic core potential, as a quantum mechanical observable, in terms of its dependence on the valence charge and the number of atomic core holes. The core hole screening distance is ∼30% larger than half the interatomic distance between the nearest neighbors and, by the equivalent cores model, is expected to be the screening radius of Sn and Te impurities in InSb.