Abstract
The photoabsorption coefficient in crystalline Si is computed in the 100-eV region (${L}_{\mathrm{II}},{L}_{\mathrm{III}}$) on the basis of core excitons, using an adaptation of the effective-mass theory. The line shape is in good agreement with experiment, and, using experimental evidence from the phosphorus impurity in Si as to the central-cell correction, we find the absolute value to be compatible with experiment.
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