Abstract
ABSTRACTSilicon core and valence levels were studied in hydrogenated amorphous silicon (a-Si:H) as a function of hydrogen concentration. The techniques used to establish the core levels were X-ray Photoelectron Spectroscopy and core-level Electron Energy Loss Spectroscopy. Changes in the local densities of states of the silicon 3s and 3p levels were examined with Auger Electron Spectroscopy. The a-Si:H samples were grown by RF sputtering. Their hydrogen concentrations varied from zero to nearly fifteen percent.
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