Abstract
Copper telluride thin films were deposited by pulsed laser deposition on Corning glass substrates using powders of Cu2Te as target. Films were grown at substrate temperatures ranging from room temperature to 300°C. The structural, compositional and electrical properties were analyzed as a function of the growth temperature. The X-ray diffraction shows that the crystalline structure of the films is strongly related to the growth temperature. The EDS analysis indicates that the stoichiometry of the CuxTe films depends on the growth temperature. For a substrate temperature of 300°C a Cu2Te film with hexagonal phase was obtained.
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