Abstract
AbstractThe microstructural changes during heating of bi-layers of Cu-poor CuInS2 and CuS under different sulfur excess conditions were studied. This was done by means of energy dispersive X-ray diffraction of polychromatic synchrotron radiation in a vacuum setup where the sulfur pressure conditions can be controlled. Understood as the formation of a new microstructure, the recrystallization of the Cu-poor CuInS2 phase was characterized by a change in the reflection profile (from Cauchy-type to Gauss-type), the reduction of the breadth and a subsequent normalized-intensity increase of the 112 reflection. The Cauchy component of the breadth was used to monitor the recrystallization under different sulfur and heating rate conditions. The main results are: a) Cu availability for the consumption of the CuIn5S8 phase is a pre-requisite for recrystallization, b) in presence of the Cu2-xS phase, increased sulfur pressure enhances recrystallization.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
