Abstract
Using current-voltage (I–V) measurements, we investigated the effect of oxygen plasma treatment on the electrical properties of Cu/n-type Ge Schottky contacts. Compared to untreated n-Ge, oxygen plasma was found to produce a higher (lower) barrier height and a lower (higher) ideality factor at a plasma power of 100 W (250 W). Compared to untreated n-Ge, the series resistance was decreased at low plasma power and increased at high plasma power, which was associated with the removal of the native oxide layer and the induced defects near the Ge surface, respectively. The smaller variations in the electrical parameters for oxygen-plasma-treated n-Ge suggest that oxygen-plasma treatment improved the homogeneity of the Schottky barrier’s interface. Our results suggest that optimized oxygen plasma can be used as a pretreatment method before depositing a thin insulating layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
