Abstract
This study sought to decrease dishing and erosion as they cause reduced yield in copper chemical mechanical polishing (Cu-CMP), which is a multilayer interconnect process that is a part of the overall semiconductor manufacturing process. We prepared a polishing pad that incorporated abrasive grains (AC Pad) and used a chelating resin in the matrix (resin). Moreover, we studied whether this polishing pad was applicable to the Cu-CMP process. Results indicated that the pad was selectively abrasive to copper (Cu) and that in the polishing of patterned wafers, it vastly decreased dishing to 1/8th and erosion to half of their respective levels in abrasive polishing. Therefore, the pad has considerable potential for use in Cu-CMP.
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