Abstract
NO 2 sensitive suspended gate (SG) field effect transistors (FET) based on copper phthalocyanine (CuPc) thin layers have been produced and investigated. The sensor structure is a hybrid one. The SG includes the CuPc sensing layer deposited in an independent process by thermal evaporation on the gate electrode (Au/alumina wafer). The transducer (FET) platform realised in standard complementary-metal-oxide-semiconductor (C-MOS) technology and containing several measuring and reference channels is mounted using the flip-chip technology over the gate structure. The sensing layers and the sensors are showing low detection limit (<50 ppb) and good sensitivity (20–70 mV/concentration decade), selectivity and reproducibility.
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