Copper nitride (Cu 3N) thin films deposited by RF magnetron sputtering

Abstract

The copper nitride thin films were prepared on glass substrate by RF magnetron sputtering method. At pure nitrogen atmosphere, the nitrogen flow rate affects the copper nitride thin films’ structures. Only a little part of nitrogen atoms insert into the body center of Cu 3N structure and parts of nitrogen atoms insert into Cu 3N crystallites boundary at higher nitrogen flow rate. But the indirect optical energy gap, E opg, decreases with increasing nitrogen flow rate. The typical value of E opg is 1.57 eV. In a nitrogen and argon mixture atmosphere, when the nitrogen partial was less than 0.2 Pa at 50 sccm total flow rate, the (1 1 1) peak of copper nitride appears. Thermal decomposition temperature of Cu 3N thin films deposited in pure nitrogen and 30 sccm flow rate was less than 300 °C. The surface morphology was smooth.