Abstract
Abstract The investigation of copper for use as an interconnection metal in the ultra large-scale integration (ULSI) era of silicon integrated circuits has accelerated in the past several years. The obvious advantages for using copper to replace currently used Al are related to its lower resistivity (1.7 μΩ-cm vs. 2.7 μω-cm for Al) and its higher electromigration resistance (several orders of magnitude higher compared with Al). The goal of this review is to examine the properties of copper and its applicability as the interconnection metal. A comparison of electromigration behavior of various possible interconnection metal in standard “bulk” state is made. This is followed by a review of the calculations made comparing (a) the RC (resistance × capacitance) time constants of various material systems and (b) the joule heating of the interconnection materials. A comparative study of various metal systems for the application as the interconnect metal is then made. These discussions will clearly establish the ...
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