Abstract
In this work, the reaction and nucleation mechanisms of the electrochemical deposition of copper on an indium-doped tin oxide (ITO) conductive glass substrate in a sulfate solution were characterized respectively by electrochemical methods Such as: cyclic voltammetry and chronoamperometry.The transients (current-time) obtained were analyzed by the model of Scharifker and Hills. The deposited copper layer can be described by a model involving instantaneous nucleation at active sites and diffusion controlled 3D growth. The values of the diffusion coefficient D for the Cu2 + ions are also calculated. Electrochemical techniques were followed by morphological characterizations with atomic force microscopy (AFM).All experiments were carried out in an acid solution at pH 4.
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